ORIENTED GROWTH OF NIOBIUM AND MOLYBDENUM ON GAAS CRYSTALS

被引：8

作者：

EIZENBERG, M ^{[1
]}

SEGMULLER, A ^{[1
]}

HEIBLUM, M ^{[1
]}

SMITH, DA ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1063/1.339768

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：466 / 473

页数：8

共 25 条

[1] Baker R. G., 1959, 64 ISI, P1
[2] Barrett C. S., 1966, STRUCTURE METALS
[3] GROWTH OF MOLYBDENUM AND TUNGSTEN ON GAAS IN A MOLECULAR-BEAM EPITAXY SYSTEM
BLOCH, J
HEIBLUM, M
KOMEM, Y
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (11) : 1092 - 1094
[4] ELECTRON-BEAM EVAPORATION OF ORIENTED NB FILMS ONTO GAAS CRYSTALS IN ULTRAHIGH-VACUUM
EIZENBERG, M
SMITH, DA
HEIBLUM, M
SEGMULLER, A
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (07) : 422 - 424
[5] GEPPERT DV, 1962, P IRE, V50, P1527
[6] THE DEVELOPMENT OF GRAIN-STRUCTURE DURING GROWTH OF METALLIC-FILMS
GROVENOR, CRM
HENTZELL, HTG
SMITH, DA
[J]. ACTA METALLURGICA, 1984, 32 (05): : 773 - 781
[7] EPITAXY OF BCC METALS ON FCC(001) SUBSTRATES
GROVENOR, CRM
SUTTON, AP
SMITH, DA
[J]. SCRIPTA METALLURGICA, 1984, 18 (09): : 939 - 944
[8] ELECTRON-GUN EVAPORATORS OF REFRACTORY-METALS COMPATIBLE WITH MOLECULAR-BEAM EPITAXY
HEIBLUM, M
BLOCH, J
OSULLIVAN, JJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (04): : 1885 - 1886
[9] KHAN IH, 1970, HDB THIN FILM TECHNO
[10] KHANG D, 1962, P IRE, V50, P1534