ELECTRICAL-RESISTIVITY OF AULN2 THIN-FILMS AT 4.2 K

被引：3

作者：

HASUMI, Y ^{[1
]}

ARAI, K ^{[1
]}

WAHO, T ^{[1
]}

YANAGAWA, F ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 02期

关键词：

D O I：

10.1063/1.333102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：471 / 475

页数：5

共 10 条

[1] FABRICATION PROCESS FOR JOSEPHSON INTEGRATED-CIRCUITS [J].

GREINER, JH ;

KIRCHER, CJ ;

KLEPNER, SP ;

LAHIRI, SK ;

WARNECKE, AJ ;

BASAVAIAH, S ;

YEN, ET ;

BAKER, JM ;

BROSIOUS, PR ;

HUANG, HCW ;

MURAKAMI, M ;

AMES, I .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (02) :195-205

[2]

HANSEN M, 1958, CONSTITUTION BINALY

[3] ELECTRICAL PROPERTIES OF AUAL2, AUGA2 AND AUIN2 [J].

JAN, JP ;

PEARSON, WB .

PHILOSOPHICAL MAGAZINE, 1963, 8 (86) :279-&

[4] PROPERTIES OF AULN2 RESISTORS FOR JOSEPHSON INTEGRATED-CIRCUITS [J].

KIRCHER, CJ ;

LAHIRI, SK .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (02) :235-242

[5]

Kittel C, 1976, INTRO SOLID STATE PH, V8

[6] THIN-FILM RESISTOR FOR JOSEPHSON TUNNELING CIRCUITS [J].

LAHIRI, SK .

THIN SOLID FILMS, 1977, 41 (02) :209-215

[7]

Larson D.C., 1971, PHYS THIN FILMS, V6, P81

[8] ELECTRICAL-RESISTIVITY MODEL FOR POLYCRYSTALLINE FILMS - CASE OF ARBITRARY REFLECTION AT EXTERNAL SURFACES [J].

MAYADAS, AF ;

SHATZKES, M .

PHYSICAL REVIEW B, 1970, 1 (04) :1382-&

[9] ELECTRICAL RESISTIVITY OF EVAPORATED THIN COBALT FILMS - APPROACH BASED ON MAYADAS-SHATZKES MODEL [J].

MOLA, EE ;

BORRAJO, J ;

HERAS, JM .

SURFACE SCIENCE, 1973, 34 (03) :561-570

[10] ELECTRICAL-RESISTIVITY OF VACUUM-DEPOSITED MOLYBDENUM FILMS [J].

OIKAWA, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (03) :1117-1122

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