THE PHOTOCURRENT-VOLTAGE CHARACTERISTICS OF THE HETEROJUNCTION COMBINATION N-SI/SNO2/REDOX-ELECTROLYTE

被引：54

作者：

DECKER, F ^{[1
]}

FRACASTORODECKER, M ^{[1
]}

BADAWY, W ^{[1
]}

DOBLHOFER, K ^{[1
]}

GERISCHER, H ^{[1
]}

机构：

[1] MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 11期

关键词：

D O I：

10.1149/1.2119547

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2173 / 2179

页数：7

共 25 条

[11]

Hovel H. J., 1975, SEMICONDUCTOR SEMIME, V11

[12] CHEMICAL VAPOR-DEPOSITION OF ANTIMONY-DOPED TIN OXIDE-FILMS FORMED FROM DIBUTYL TIN DIACETATE [J].

KANE, J ;

SCHWEIZER, HP ;

KERN, W .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (02) :270-277

[13] SEMICONDUCTOR ELECTRODES .11. BEHAVIOR OF N-TYPE AND P-TYPE SINGLE-CRYSTAL SEMICONDUCTORS COVERED WITH THIN NORMAL-TIO2 FILMS [J].

KOHL, PA ;

FRANK, SN ;

BARD, AJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) :225-229

[14]

Levich V., 1962, PHYSICO CHEM HYDRODY

[15] STUDY OF OXIDE-BASED HETEROSTRUCTURE PHOTOELECTRODES [J].

MARUSKA, HP ;

GHOSH, AK .

SOLAR ENERGY MATERIALS, 1979, 1 (5-6) :411-429

[16] METAL FILMED SEMICONDUCTOR PHOTOELECTROCHEMICAL CELLS [J].

MENEZES, S ;

HELLER, A ;

MILLER, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1268-1273

[17] INTERACTION OF LIGHT AND TRANSPORT CONTROL IN SEMICONDUCTOR BASED PHOTOELECTROCHEMICAL CELLS [J].

MILLER, B ;

MENEZES, S ;

HELLER, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) :1483-1490

[18]

MOLLERS F, 1972, BERICH BUNSEN GESELL, V76, P469

[19]

NAKATO Y, 1976, BER BUNSEN PHYS CHEM, V80, P1002, DOI 10.1002/bbpc.19760801015

[20] PHOTO-ELECTROCHEMICAL BEHAVIORS OF SEMICONDUCTOR ELECTRODES COATED WITH THIN METAL-FILMS [J].

NAKATO, Y ;

OHNISHI, T ;

TSUBOMURA, H .

CHEMISTRY LETTERS, 1975, (08) :883-886

← 1 2 3 →