CALIBRATION CURVE FOR THE CUTOFFS WAVELENGTH OF PHOTODIODES IN HG1-XCDXTE EPILAYERS

被引：7

作者：

SAND, E

NEMIROVSKY, Y

机构：

来源：

INFRARED PHYSICS | 1985年 / 25卷 / 03期

关键词：

D O I：

10.1016/0020-0891(85)90035-1

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：591 / 594

页数：4

共 8 条

[1] Broudy R., 1980, Proceedings of the Society of Photo-Optical Instrumentation Engineers, V217, P69
[2] BROUDY RM, 1977, P SOC PHOTOOPT INSTR, V124, P62
[3] KRUSE PW, 1981, SEMICONDUCTORS SEMIM, V18
[4] LONG D, 1977, TOPICS APPLIED PHYSI, V19
[5] MCKELVEY JP, 1969, SOLID STATE SEMICOND
[6] INTRINSIC CARRIER CONCENTRATION OF HG1-XCDXTE
NEMIROVSKY, Y
FINKMAN, E
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) : 8107 - 8111
[7] REINE MB, 1981, SEMICONDUCTORS SEMIM, V18
[8] SAND E, UNPUB APPL PHYS LETT