PULSED AND CW HIGH-TEMPERATURE OPERATION OF INGAAS/GAAS STRAINED LAYER VERTICAL CAVITY SURFACE EMITTING LASERS

被引：9

作者：

VONLEHMEN, A

BANWELL, T

CARRION, L

STOFFEL, N

FLOREZ, L

HARBISON, J

机构：

[1] Bellcore, NJ 00701, Red Bank

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 01期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of strained layer InGaAs/GaAs vertical cavity surface emitting lasers defined by ion implantation over a approximately 75-degrees-C temperature range is reported on. Maximum CW output levels for the temperature extremes of 10 and 86-degrees-C are 7.5 mW and 200-mu-W, respectively, for 20 x 20-mu-m2 devices. The temperature dependence of the CW threshold current exhibits exponential behaviour to 80-degrees-C.

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页码：21 / 22

页数：2

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