GROWTH-PROCESSES OF SI(111)-ROOT-3X-ROOT-3-AG STUDIED BY SCANNING TUNNELING MICROSCOPE

被引：13

作者：

OHNISHI, H ^{[1
]}

KATAYAMA, I ^{[1
]}

OHBA, Y ^{[1
]}

SHOJI, F ^{[1
]}

OURA, K ^{[1
]}

机构：

[1] OSAKA INST TECHNOL,FAC GEN EDUC,DEPT APPL PHYS,ASAHI KU,OSAKA 535,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 6B期

关键词：

SI(111)ROOT-3X-ROOT-3-R30-DEGREES-AG; SCANNING TUNNELING MICROSCOPE; DOMAIN GROWTH PROCESSES; SHALLOW AND DEEP ROOT-3-AG DOMAINS; HCT MODEL;

D O I：

10.1143/JJAP.32.2920

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Domain growth processes of Si(111) square-root 3 x square-root 3-R30-degrees-Ag surfaces and their dependence upon deposition conditions have been investigated by means of scanning tunneling microscope. When Ag is deposited at room temperature, small islands are formed on the terraces. After annealing at 350-degrees-C, these small islands change into square-root 3-Ag domains on the terraces without diffusion of Ag atoms to the step edges. On the other hand, when Ag is deposited on a hot substrate of about 350-degrees-C, the square-root 3-Ag domains nucleate at the step edges and few square-root 3-Ag domains are observed on the terraces. Moreover, two kinds of square-root 3-Ag domains are found in either case: one domain is geometrically higher than the other domain.

引用

页码：2920 / 2922

页数：3

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