HARTREE CONTRIBUTION TO THE BAND-GAP RENORMALIZATION IN SEMICONDUCTOR MICROSTRUCTURES

被引：5

作者：

GLUTSCH, S

DAN, NT

BECHSTEDT, F

机构：

[1] UNIV JENA,INST FESTKORPERTHEORIE & THEORET OPT,D-07743 JENA,GERMANY

[2] HUE UNIV,DEPT PHYS,HUE,VIETNAM

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.52.13776

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of band-gap renormalization is usually understood in terms of exchange and correlation. This leads to a reduction of the gap energy with increasing carrier density. We show that in low-dimensional systems a Hartree contribution also occurs because of the lack of local charge neutrality. This effect reduces the total band-gap renormalization. Explicit expressions are given for quantum wells and quantum wires and the order of magnitude is studied.

引用

页码：13776 / 13779

页数：4

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