SHALLOW QUANTUM-WELL EXCITONS - 2D OR 3D

被引：36

作者：

BRENER, I

KNOX, WH

GOOSSEN, KW

CUNNINGHAM, JE

机构：

[1] AT and T Bell Laboratories, Holmdel, NJ 07733, Crawfords Corner Road

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 70卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.70.319

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A new regime is obtained in semiconductor heterostructures with constituents of nearly identical band gaps. Previously, it has been shown that even extremely shallow quantum wells (SHQWs) exhibit excitonic and electroabsorption properties typical of a 2D system, but 3D transport features. We show that, surprisingly, even when carriers are two-dimensionally confined in SHQWs, the hole spin relaxation is extremely fast (approximately 400 fsec) as in the bulk (3D) limit and that a 2D-3D transition in the hole spin dynamics in GaAs/AlxGa1-xAs SHQWs takes place at x approximately 5%.

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页码：319 / 322

页数：4

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