GAINASP INP BURIED-HETEROSTRUCTURE OPTICAL-WAVEGUIDES AT A 1.5 MU-M WAVELENGTH

被引：4

作者：

MIKAMI, O

NAKAGOME, H

SAITOH, T

机构：

来源：

关键词：

D O I：

10.1049/el:19830405

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：593 / 595

页数：3

共 8 条

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[J]. ELECTRONICS LETTERS, 1983, 19 (03) : 81 - 82
[2] CARENCO A, 1980, APPL PHYS LETT, V40, P653
[3] DEMEO NL, 1982, TOPICAL M INTEGRATED
[4] KAMINOW IP, 1982, TOPICAL M INTEGRATED
[5] MARCATILI EAJ, 1969, BELL SYST TECH J, V48, P2071
[6] 1.5 MU-M GAINASP INP DISTRIBUTED BRAGG REFLECTOR LASERS WITH BUILT-IN OPTICAL-WAVEGUIDE
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SAITOH, T
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[J]. ELECTRONICS LETTERS, 1982, 18 (11) : 458 - 460
[7] ULTIMATE LOW-LOSS SINGLE-MODE FIBER AT 1.55 MU-M
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[J]. ELECTRONICS LETTERS, 1979, 15 (04) : 106 - 108
[8] INP-GAINASP BURIED HETEROSTRUCTURE LASERS OF 1.5 MU-M REGION
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NOGUCHI, Y
TAKAHEI, K
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IWANE, G
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (04) : L218 - L220