ANION-ANTISITE-LIKE DEFECTS IN III-V COMPOUNDS

被引：55

作者：

CALDAS, MJ ^{[1
]}

DABROWSKI, J ^{[1
]}

FAZZIO, A ^{[1
]}

SCHEFFLER, M ^{[1
]}

机构：

[1] FRITZ HABER INST,W-1000 BERLIN 33,GERMANY

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.65.2046

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report ab initio calculations of total energies and electronic structures of P, As, and Sb donors in GaAs and InP. In the Td geometry, all these defects exhibit two donor states in the forbidden gap: an internal optical excitation energy of the order of 1 eV, and a Franck-Condon shift of the order of 0.1 eV. All these defects possess a metastable geometry of the electrically neutral vacancy-interstitial pair with no donor states in the band gap. We discuss the differences between the six systems and explain why an optically inducible transition to the metastable state is inefficient for GaAs:SbGa. © 1990 The American Physical Society.

引用

页码：2046 / 2049

页数：4

共 15 条

[1] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J].