SUPERPOSITION OF LIGHT-HOLE AND HEAVY-HOLE BANDGAPS IN INGAAS/INALAS STRAINED QUANTUM-WELL STRUCTURES

被引：8

作者：

FRITZ, IJ

KLEM, JF

BRENNAN, TM

WENDT, JR

ZIPPERIAN, TE

机构：

[1] Sandia National Laboratories, Albuquerque

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1991年 / 10卷 / 01期

关键词：

LAYER SUPERLATTICES; OPTICAL-ABSORPTION; UNIAXIAL-STRESS; ELECTRIC-FIELD;

D O I：

10.1016/0749-6036(91)90156-L

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present calculations and data on superpositioning of light- and heavy-hole band-edge states in InxGa1-xAs InyAl1-yAs multiple strained quantum-well structures. This superpositioning, produced by tailoring the built-in biaxial tensile strain in the InGaAs quantum wells, may improve performance of electro-optic devices operating near bandgap. We have used electric-field dependent photocurrent and electroreflectance spectroscopies to characterize two samples with bandgaps near 1.5 μm. Of these samples, one has coincident bandgaps at zero applied electric field, whereas the other requires a field of ∼ 2 × 105 V/cm for superpositioning. Our observed transition energies agree with modeling based on phenomenological deformation-potential theory coupled with two-band envelope-function calculations. © 1991.

引用

页码：99 / 106

页数：8