A COOLED 1-2 GHZ BALANCED HEMT AMPLIFIER

被引:19
作者
PADIN, S [1 ]
ORTIZ, GG [1 ]
机构
[1] CALTECH,JET PROP LAB,PASADENA,CA 91109
基金
美国国家航空航天局;
关键词
D O I
10.1109/22.85395
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The design details and measurement results for a cooled L-band balanced HEMT amplifier are presented. The amplifier uses commercially available packaged HEMT devices (Fujitsu FHR02FH). At a physical temperature of 12 K the amplifier achieves noise temperatures between 3 and 6 K over the 1 to 2 GHz band. The associated gain is approximately 20 dB.
引用
收藏
页码:1239 / 1243
页数:5
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