ULTRA-LOW-NOISE CRYOGENIC HIGH-ELECTRON-MOBILITY TRANSISTORS

被引：50

作者：

DUH, KHG

POSPIESZALSKI, MW

KOPP, WF

HO, P

JABRA, AA

CHAO, PC

SMITH, PM

LESTER, LF

BALLINGALL, JM

WEINREB, S

机构：

[1] NATL RADIO ASTRON OBSERV,CHARLOTTESVILLE,VA 22903

[2] GE,ELECTR LAB,ADV LITHOG PROC GRP,SYRACUSE,NY 13221

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 03期

关键词：

Manuscript received September 8; 1987. The HEMT devices were developed at the General Electric Company with the support of the Jet Propulsion Laboratory; California Institute of Technology; under Contract 957352; monitored by S. Petty. The National Radio Astronomy Observatory is operated by Associated Universities; Inc. under contract with the National Science Foundation. K. H. G. Duh; W; F; Kopp; P; Ho; A; Jabra; P.-C; Chao; M; Smith; L; Lester; and J. M. Ballingall are with the Electronics Laboratory; General Electric Company; Syracuse; NY 13221. M. W. Pospieszalksi and S. Weinreb are with the National Radio Astronomy Observatory; Charlottesville; VA 22903. IEEE Log Number 8718789;

D O I：

10.1109/16.2448

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：249 / 256

页数：8

共 15 条

[1] NOISE MODELING IN SUBMICROMETER-GATE TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS [J].