DEEP LEVELS IN SEMICONDUCTORS - INFLUENCE OF HYDROSTATIC-PRESSURE

被引：13

作者：

JANTSCH, W

WUNSTEL, K

KUMAGAI, O

VOGL, P

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

[2] SONY CORP,RES CTR,YOKOHAMA,KANAGAWA 240,JAPAN

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90478-3

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：188 / 190

页数：3

共 19 条

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[8]

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[9] THEORY OF SUBSTITUTIONAL DEEP TRAPS IN COVALENT SEMICONDUCTORS [J].

HJALMARSON, HP ;

VOGL, P ;

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DOW, JD .

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[10] EFFECT OF PRESSURE ON ENERGY LEVELS OF IMPURITIES IN SEMICONDUCTORS .1. ARSENIC, INDIUM, AND ALUMINUM IN SILICON [J].

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