LOW-NOISE ELECTRONICS FOR SEMICONDUCTOR-DETECTORS

被引：6

作者：

GOSTILO, VV

机构：

[1] Riga Scientific Research Institute for Radioisotope Apparatus, Riga, 226005

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1992年 / 322卷 / 03期

关键词：

D O I：

10.1016/0168-9002(92)91233-Y

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A possible way to attain the best energy resolution of semiconductor detectors is discussed in this report. It is carried out through the matching of detector parameters and parameters of field-effect transistors (FET) of input stages in charge-sensitive preamplifiers (CSP). Four types of low-noise FETs for detectors of various capacitance are presented, the noise response of transistors is discussed. Thin films low-noise feedback resistors with nominals of 10(6) to 10(15) OMEGA are developed. The energy resolution of various detectors with low-noise electronics is presented.

引用

页码：566 / 568

页数：3

共 7 条

[1]

BUCKINGHAM MJ, 1983, NOISE ELECTRONICS DE

[2]

GLASMACHERS A, 1980, IEEE T NUCL SCI, V27, P273

[3]

GOSTILO VV, 1991, 41ST NUCL SPECTR STR, P441

[4]

GOSTILO VV, 1990, 1990 INT SEM NUCL EL, P45