OPTICAL MONITORING FOR RATE AND UNIFORMITY CONTROL OF LOW-POWER PLASMA-ENHANCED CVD

被引：8

作者：

DAUTREMONTSMITH, WC

LOPATA, J

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 04期

关键词：

D O I：

10.1116/1.582716

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：943 / 946

页数：4

共 6 条

[1] CHARACTERIZATION OF PLASMA-DEPOSITED SILICON DIOXIDE
ADAMS, AC
ALEXANDER, FB
CAPIO, CD
SMITH, TE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) : 1545 - 1551
[2] BURGGRAF PS, 1980, SEMICONDUCTOR INT, V3, P23
[3] DAUTREMONTSMITH WC, UNPUB
[4] DUN H, 1981, ELECTROCHEM SOC, V128, P1555
[5] PLASMA-PROMOTED DEPOSITION OF THIN INORGANIC FILMS
RAND, MJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 420 - 427
[6] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON
SPEAR, WE
LECOMBER, PG
[J]. SOLID STATE COMMUNICATIONS, 1975, 17 (09) : 1193 - 1196