HIGH-EFFICIENCY CW OPERATION OF MOCVD-GROWN GAAS/ALGAAS VERTICAL-CAVITY LASERS WITH RESONANT PERIODIC GAIN

被引：12

作者：

SCHAUS, CF

RAJA, MYA

MCINERNEY, JG

SCHAUS, HE

SUN, S

MAHBOBZADEH, M

BRUECK, SRJ

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 10期

关键词：

D O I：

10.1049/el:19890432

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：637 / 639

页数：3

共 6 条

[1]

CORZINE SW, 1988, OCT P ANN M IEEE LAS, P5

[2]

GOURLEY PL, 1989, APPL PHYS LETT

[3] SURFACE EMITTING SEMICONDUCTOR-LASERS [J].

IGA, K ;

KOYAMA, F ;

KINOSHITA, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (09) :1845-1855

[4] NOVEL WAVELENGTH-RESONANT OPTOELECTRONIC STRUCTURE AND ITS APPLICATION TO SURFACE-EMITTING SEMICONDUCTOR-LASERS [J].

RAJA, MYA ;

BRUECK, SRJ ;

OSINSKI, M ;

SCHAUS, CF ;

MCINERNEY, JG ;

BRENNAN, TM ;

HAMMONS, BE .

ELECTRONICS LETTERS, 1988, 24 (18) :1140-1142

[5]

RAJA MYA, 1989, IN PRESS IEE J Q JUN

[6] MOCVD GROWTH OF GAAS/ALGAAS WAVELENGTH RESONANT PERIODIC GAIN VERTICAL CAVITY SURFACE-EMITTING LASER [J].

SCHAUS, CF ;

SCHAUS, HE ;

SUN, S ;

RAJA, MYA ;

BRUECK, SRJ .

ELECTRONICS LETTERS, 1989, 25 (08) :538-539

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