GROWTH OF AL ON GAAS(001) - OBSERVATION OF INTERFACIAL SUBMONOLAYER STRUCTURE

被引：4

作者：

DONNER, SK

BLUMENTHAL, R

HERMAN, JL

TREHAN, R

FURMAN, E

WINOGRAD, N

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 17期

关键词：

D O I：

10.1063/1.102207

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1753 / 1755

页数：3

共 32 条

[1] INITIAL GROWTH OF AL ON GAAS(001) AND ELECTRICAL CHARACTERIZATION OF THE INTERFACE
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[2] RECONSTRUCTIONS OF GAAS AND AIAS SURFACES AS A FUNCTION OF METAL TO AS RATIO
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[3] SURFACE PHASES OF GAAS(100) AND ALAS(100)
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[4] SECONDARY ION MASS SPECTROSCOPIC STUDIES OF THE ATOMIC GEOMETRY OF GAAS(110)
BLUMENTHAL, R
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CAFFEY, KP
FURMAN, E
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1444 - 1450
[5] ATOMIC AND ELECTRONIC-STRUCTURE OF INP-METAL INTERFACES - A PROTOTYPICAL III-V COMPOUND SEMICONDUCTOR
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STOFFEL, NG
MARGARITONDO, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 661 - 666
[6] UNPINNED SCHOTTKY-BARRIER FORMATION AT METAL GAAS INTERFACES
BRILLSON, LJ
VITURRO, RE
MAILHIOT, C
SHAW, JL
TACHE, N
MCKINLEY, J
MARGARITONDO, G
WOODALL, JM
KIRCHNER, PD
PETTIT, GD
WRIGHT, SL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1263 - 1269
[7] SURFACE STOICHIOMETRY AND MORPHOLOGY OF MBE GROWN (001)GAAS THROUGH THE ANALYSIS OF RHEED OSCILLATIONS
BRIONES, F
GOLMAYO, D
GONZALEZ, L
DEMIGUEL, JL
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L478 - L480
[8] EFFECT OF DISORDER ON THE AL/GAAS(001) INTERFACE
DONNER, SK
CAFFEY, KP
WINOGRAD, N
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 742 - 746
[9] COMPOSITION AND STRUCTURE OF DIFFERENTLY PREPARED GAAS(100) SURFACES STUDIED BY LEED AND AES
DRATHEN, P
RANKE, W
JACOBI, K
[J]. SURFACE SCIENCE, 1978, 77 (01) : L162 - L166
[10] HARRIS JJ, 1981, SURF SCI, V103, pL90, DOI 10.1016/0039-6028(81)90091-1

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