REACTIVE ION ETCHING OF SIO2 WITH VERTICAL SIDEWALLS AND ITS APPLICATION TO ION-IMPLANTATION MASKS FOR BUBBLE-DEVICES

被引：3

作者：

GOKAN, H

MUKAINARU, M

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 06期

关键词：

D O I：

10.1116/1.582950

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1620 / 1624

页数：5

共 24 条

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