A NEW HALF-MICROMETER P-CHANNEL MOSFET WITH EFFICIENT PUNCHTHROUGH STOPS

被引：10

作者：

ODANAKA, S

FUKUMOTO, M

FUSE, G

SASAGO, M

OHZONE, T

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 03期

关键词：

D O I：

10.1109/T-ED.1986.22489

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：317 / 321

页数：5

共 15 条

[1] DEVICE DESIGN FOR THE SUBMICROMETER P-CHANNEL FET WITH N+ POLYSILICON GATE [J].

CHAM, KM ;

CHIANG, SY .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (07) :964-968

[2] EXPERIMENTAL RESULTS ON SUBMICRON-SIZE P-CHANNEL MOSFETS [J].

FICHTNER, W ;

LEVIN, RM ;

TAYLOR, GW .

ELECTRON DEVICE LETTERS, 1982, 3 (02) :34-37

[3] DESIGN TRADEOFFS BETWEEN SURFACE AND BURIED-CHANNEL FETS [J].

HU, GJ ;

BRUCE, RH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) :584-588

[4]

Klaassen F. M., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P613

[5]

Meguro S., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P59

[6]

NISHIUCHI K, 1978, IEDM TECH DIG, P26

[7]

ODANAKA S, 1982, SSD8296 JAP IECE TEC, P23

[8] DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR [J].

OGURA, S ;

TSANG, PJ ;

WALKER, WW ;

CRITCHLOW, DL ;

SHEPARD, JF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1359-1367

[9]

Ogura S., 1982, International Electron Devices Meeting. Technical Digest, P718

[10]

Parrillo L. C., 1982, International Electron Devices Meeting. Technical Digest, P706

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