TUNGSTEN SILICIDE FORMATION BY MULTIPULSE EXCIMER-LASER IRRADIATION

被引:2
作者
LUBY, S
MAJKOVA, E
DANNA, E
LUCHES, A
MARTINO, M
TUFANO, A
MAJNI, G
机构
[1] UNIV LECCE, DEPT PHYS, I-73100 LECCE, ITALY
[2] UNIV ANCONA, DEPT MAT & EARTH SCI, I-60100 ANCONA, ITALY
关键词
D O I
10.1016/0169-4332(93)90531-F
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The formation Of tungsten silicide induced by XeCl laser irradiation of W(150 nm)/Si and W(5 nm)/Si samples was studied at laser fluences ranging from 0.6 to 1.8 J/cm2. Up to 300 subsequent laser pulses were directed to the same irradiation site. After irradiation the samples were examined by different diagnostic techniques: Rutherford backscattering spectroscopy, X-ray scattering, resistometry and surface profilometry. Complete reaction of the 150 nm W film with silicon was obtained between 30 and 100 laser pulses at the fluence of 1.2 J/cm2, and after 30 laser pulses and at the fluence of 1.5 j/cm2. The sheet resistance of these silicides was 5-10 OMEGA. At the used fluences, only the onset of silicide synthesis at the W-Si interface was observed for the 500 nm W film. Numerical computations of the evolution and depth profiles of the temperature in the samples as a consequence of a laser pulse were performed and compared to the experimental results.
引用
收藏
页码:345 / 349
页数:5
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