PREPARATION AND STRUCTURE OF AMORPHOUS-SEMICONDUCTOR HYDROGENATED TIN

被引：1

作者：

VERGNAT, M

MARCHAL, G

MANGIN, P

机构：

[1] Laboratoire de Physique du Solide, U.A.au C.N.R.S. n 155, Université de Nancy I, 54506 Vandoeuvre les Nancy Cedex

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 22期

关键词：

D O I：

10.1063/1.103893

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Evaporation on substrates maintained at 77 K under an atomic hydrogen flow allows us to prepare amorphous semiconductor tin. The resistivity is very high, 3×103 Ω cm and the diffraction pattern is typical of the random continuous networks of amorphous germanium and silicon. This structure is stable up to 180 K.

引用

页码：2300 / 2301

页数：2

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