PHOTOMETRIC FIGURES OF MERIT FOR SEMICONDUCTOR LUMINESCENT SOURCES OPERATING IN SPONTANEOUS MODE

被引：58

作者：

CARR, WN

机构：

来源：

INFRARED PHYSICS | 1966年 / 6卷 / 01期

关键词：

D O I：

10.1016/0020-0891(66)90019-4

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：1 / &

共 21 条

[11] SHAPED ELECTROLUMINESCENT GAAS DIODES
FRANKLIN, AR
NEWMAN, R
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) : 1153 - &
[12] IMPROVING EXTERNAL EFFICIENCY OF ELECTROLUMINESCENT DIODES
GALGINAITIS, SV
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (02) : 460 - +
[13] GERSHENZON M, 1965, LUMINESCENCE ORGANIC
[14] GOLDBERG P, 1965, LUMINESCENCE ORGA ED
[15] HENDERSON GA, PRIVATE COMMUNICATIO
[16] IMMERSED RADIATION DETECTORS
JONES, RC
[J]. APPLIED OPTICS, 1962, 1 (05): : 607 - 613
[17] LOCKWOOD HF, 1964, J APPL PHYS, V35, P2110
[18] LOSSEV OW, 1923, TELEGRAFIA TELEFONIA, V18, P61
[19] REFRACTIVE INDEX OF GAAS
MARPLE, DTF
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) : 1241 - &
[20] DISPERSION OF INDEX OF REFRACTION NEAR ABSORPTION EDGE OF SEMICONDUCTORS
STERN, F
[J]. PHYSICAL REVIEW, 1964, 133 (6A): : 1653 - +