EXCIMER AND DYE-LASER ANNEALING OF SILICON-NITRIDE-CAPPED, SI-IMPLANTED GAAS

被引：6

作者：

COMPAAN, A ^{[1
]}

ABBI, SC ^{[1
]}

YAO, HD ^{[1
]}

BHAT, A ^{[1
]}

LANGER, DW ^{[1
]}

机构：

[1] USAF,AVION LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 06期

关键词：

D O I：

10.1063/1.339448

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2561 / 2563

页数：3

共 26 条

[1]

ABBI SC, 1986, B AM PHYS SOC, V31, P274

[2]

ABSTREITER G, 1984, TOP APPL PHYS, V54, P5

[3] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1983, 27 (02) :985-1009

[4]

BADAWI MH, 1979, ELECTRON LETT, V15, P448

[5] AN APPLICATION OF THE BOLTZMANN TRANSPORT-EQUATION TO ION RANGE AND DAMAGE DISTRIBUTIONS IN MULTILAYERED TARGETS [J].

CHRISTEL, LA ;

GIBBONS, JF ;

MYLROIE, S .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6176-6182

[6] PULSE ANNEALING DEFICIENCIES IN GAAS [J].

DAVIES, DE ;

LORENZO, JP ;

RYAN, TG .

APPLIED PHYSICS LETTERS, 1980, 37 (07) :612-615

[7]

DESHENG J, 1982, J APPL PHYS, V53, P999

[8]

FLETCHER J, 1981, MATER RES SOC S P, V2, P421

[9]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[10] HEAVY DOPING OF GAAS AND ALGAAS WITH SILICON BY MOLECULAR-BEAM EPITAXY [J].

HEIBLUM, M ;

WANG, WI ;

OSTERLING, LE ;

DELINE, V .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6751-6753

← 1 2 3 →