CRYSTAL-GROWTH OF GE STUDIED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND PHOTOEMISSION

被引：8

作者：

AARTS, J ^{[1
]}

HOEVEN, AJ ^{[1
]}

LARSEN, PK ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.575177

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：607 / 610

页数：4

共 12 条

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[2] AARTS J, IN PRESS PHYS REV B
[3] AARTS J, 1986, APPL PHYS LETT, V48, P933
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1380 - 1384
[5] PHASE-LOCKED RHEED OSCILLATIONS DURING MBE GROWTH OF GAAS AND ALXGA1-XAS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 19 - 25
[6] STRUCTURE OF SN/GE(111) FROM LOW-ENERGY ELECTRON-DIFFRACTION AND PHOTOEMISSION-STUDIES
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[J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2330 - 2337
[7] ANGLE-RESOLVED PHOTOEMISSION-STUDIES OF GE(001)-(2X1)
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[J]. PHYSICAL REVIEW B, 1984, 30 (12): : 7005 - 7008
[8] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS
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NORTON, N
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01): : 1 - 8
[9] ANGLE-RESOLVED PHOTOELECTRON-SPECTROSCOPY INVESTIGATION OF INTRINSIC SURFACE-STATES ON THE GE(001)-(2X1) RECONSTRUCTED SURFACE
NELSON, JG
GIGNAC, WJ
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SHIRLEY, DA
[J]. PHYSICAL REVIEW B, 1983, 27 (06): : 3924 - 3926
[10] SUBMICROCRYSTALLITES AND THE ORIENTATIONAL PROXIMITY EFFECT
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[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (15) : 1599 - 1601

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