INFLUENCE OF STOICHIOMETRY ON THE MICROSTRUCTURE AND POSITIVE TEMPERATURE-COEFFICIENT OF RESISTIVITY OF SEMICONDUCTING BARIUM-TITANATE CERAMICS

被引：90

作者：

LIN, TF ^{[1
]}

HU, CT ^{[1
]}

LIN, IN ^{[1
]}

机构：

[1] CHUN SHAN INST SCI & TECHNOL,LUNGTAN 32526,TAIWAN

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1990年 / 73卷 / 03期

关键词：

barium titanate; microstructure; PTCR effect; semiconductors; sintering;

D O I：

10.1111/j.1151-2916.1990.tb06549.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The influence of stoichiometry, i.e., Ba/Ti ratio, on the microstructure and positive temperature coefficient of resistivity (PTCR) characteristics of BaTiO3 was investigated. Fine‐grain microstructures are obtained for Ba‐rich, stoichiometric, low‐temperature‐sintered, Ti‐rich materials. The room‐temperature resistivities (ρRT) of the fine‐grain Ti‐rich samples are large (>108Ω·cm). Excess Ba2+ ions can decrease the ρRT, by more than 2 orders of magnitude, because of the compensation of barium vacancies near the grain‐boundary regions. Rapid cooling after sintering can also decrease ρRT (⋍100×) and is ascribed to the suppression of reoxidation. Large‐grain microstructures and low ρRT, on the other hand, are generally observed for Ti‐rich and Al2O3‐SiO2‐TiO2‐added samples after sintering at a temperature higher than the corresponding eutectic point. Copyright © 1990, Wiley Blackwell. All rights reserved

引用

页码：531 / 536

页数：6

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