CHANNELING AND TEM STUDIES ON SB+ IMPLANTED NI

Results are reported of a detailed study of Sb** plus ion implantation of single crystal and polycrystalline nickel. Rutherford backscattering and channelling together with transmission electron microscopy and transmission and reflection electron diffraction have been employed to measure the type and level of radiation damage, atom location and thermal annealing of damage for Sb** plus implantation. The susceptibility of Ni to heavy ion damage has further been examined using molecular Sb//2** plus implantations.