SINGLE-CRYSTAL N-INAS COUPLED JOSEPHSON JUNCTION

[1] FEASIBILITY OF HYBRID JOSEPHSON FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2736 - 2743

[2] de Gennes P. G., 1966, SUPERCONDUCTIVITY ME

[3] JOSEPHSON TUNNELING THROUGH LOCALLY THINNED SILICON WAFERS [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 753 - 756

[4] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 458 - 459

[5] SUPERCONDUCTING CONTACTS TO P-INAS [J]. IEEE TRANSACTIONS ON MAGNETICS, 1979, 15 (01) : 435 - 438

[6] ROTH LB, 1978, AIP C P, V44, P384

[7] SILICON-COUPLED JOSEPHSON-JUNCTIONS AND SUPER-SHOTTKY DIODES WITH COPLANAR ELECTRODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) : 1394 - 1397

[8] SILICON-BARRIER JOSEPHSON JUNCTIONS IN COPLANAR AND SANDWICH CONFIGURATIONS [J]. IEEE TRANSACTIONS ON MAGNETICS, 1977, 13 (01) : 862 - 865

[9] SETO J, 1972, LOW TEMP PHYS, V3, P328

[10] Silver A. H., 1978, AIP C P, V44, P364

[1] FEASIBILITY OF HYBRID JOSEPHSON FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2736 - 2743

[2] de Gennes P. G., 1966, SUPERCONDUCTIVITY ME

[3] JOSEPHSON TUNNELING THROUGH LOCALLY THINNED SILICON WAFERS [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 753 - 756

[4] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 458 - 459

[5] SUPERCONDUCTING CONTACTS TO P-INAS [J]. IEEE TRANSACTIONS ON MAGNETICS, 1979, 15 (01) : 435 - 438

[6] ROTH LB, 1978, AIP C P, V44, P384

[7] SILICON-COUPLED JOSEPHSON-JUNCTIONS AND SUPER-SHOTTKY DIODES WITH COPLANAR ELECTRODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) : 1394 - 1397

[8] SILICON-BARRIER JOSEPHSON JUNCTIONS IN COPLANAR AND SANDWICH CONFIGURATIONS [J]. IEEE TRANSACTIONS ON MAGNETICS, 1977, 13 (01) : 862 - 865

[9] SETO J, 1972, LOW TEMP PHYS, V3, P328

[10] Silver A. H., 1978, AIP C P, V44, P364