WETTABILITY AND INTERFACIAL BONDING IN AU-SI/SIC SYSTEM

被引：69

作者：

DREVET, B ^{[1
]}

KALOGEROPOULOU, S ^{[1
]}

EUSTATHOPOULOS, N ^{[1
]}

机构：

[1] ENSEEG, INST NATL POLYTECH GRENOBLE,CNRS,UA 29, THERMODYNAM & PHYSICOCHIM MET LAB, F-38402 ST MARTIN DHERES, FRANCE

来源：

ACTA METALLURGICA ET MATERIALIA | 1993年 / 41卷 / 11期

关键词：

D O I：

10.1016/0956-7151(93)90041-P

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using the sessile drop method under vacuum, the wettability of monocrystalline alpha-SiC by Au-Si alloys is studied at 1373 K. Additions of Si to Au lead to a strong decrease of the contact angle from theta >> 90-degrees to theta << 90-degrees. This effect is obtained without significant reactivity and is due to adsorption of Si at the Au/SiC interface, with the formation of a strong chemical bond localised at the interface. Experimental evidence is given showing that oxygen, present in the furnace as an impurity, reinforces the beneficial effect of Si on wetting and can lead to nearly perfect wetting.

引用

页码：3119 / 3126

页数：8

共 24 条

[1] WETTING UNDER CHEMICAL-EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS [J].