SEMICONDUCTOR MOPA WITH MONOLITHICALLY INTEGRATED 5GHZ ELECTROABSORPTION MODULATOR

被引：8

作者：

VERDIELL, JM

OSINSKY, JS

WELCH, DF

SCIFRES, DR

机构：

[1] San Jose, CA 95134

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 14期

关键词：

ELECTROABSORPTION MODULATORS; INTEGRATED; OPTOELECTRONICS; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19950762

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-power monolithically-integrated master oscillator electroabsorption modulator/power amplifier semiconductor laser is demonstrated. The device emits >1W output beam power. Extinction ratios of -15dB are obtained with a 2.9V reverse bias voltage on the electroabsorption modulator. The 3dB small signal modulation bandwidth is as high as 5GHz. High-power diffraction-limited semiconductor laser sources with high-speed modulation capability are very desirable for applications such as intersatellite space telecommunications.

引用

页码：1187 / 1189

页数：3

共 5 条

[1] LASER COMPATIBLE WAVE-GUIDE ELECTROABSORPTION MODULATOR WITH HIGH CONTRAST AND LOW OPERATING VOLTAGE IN GAAS/ALGAAS [J].