LASER COMPATIBLE WAVE-GUIDE ELECTROABSORPTION MODULATOR WITH HIGH CONTRAST AND LOW OPERATING VOLTAGE IN GAAS/ALGAAS

被引：19

作者：

MOSS, D

LANDHEER, D

DELAGE, A

CHATENOUD, F

DION, M

机构：

[1] Institute for Microstructural Sciences, National Research Council of Canada, Solid State Optoelectronics Consortium, Ottawa, Ont., K1A-0R6, Ont. Ontario

[2] Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ont.

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 07期

关键词：

WAVE-GUIDE MODULATORS; QUANTUM WELLS; DIODE;

D O I：

10.1109/68.87941

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a SQW-GRINSCH ridge-waveguide electroabsorption modulator in GaAs/Al(x)Ga1-xAs that has a very high contrast ratio, low operating voltage, and also acts as a laser with relatively low threshold current. We achieve contrast ratios of 10 dB/100-mu-m of cavity length with an operating voltage of less than -4 V. In addition, when operated as a laser, the device exhibits a threshold current of 25 mA. The active layer has a capacitance of 205 pF/mm2 which would allow the fabrication of a device with a modulation bandwidth of over 20 GHz. The laser operated at a wavelength only 2-3 nm shorter than the optimum modulation wavelength.

引用

页码：645 / 647

页数：3

共 12 条

[1] GAAS-ALGAAS MULTIPLE-QUANTUM-WELL LASERS FOR MONOLITHIC INTEGRATION WITH OPTICAL MODULATORS [J].

CHATENOUD, F ;

DZURKO, KM ;

DION, M ;

MOSS, D ;

BARBER, R ;

DELAGE, A ;

LANDHEER, D .

CANADIAN JOURNAL OF PHYSICS, 1991, 69 (3-4) :491-496

[2]

FOXON CT, COMMUNICATION

[3] RELATING THE CHIRP PARAMETER TO THE NUMBER OF QUANTUM WELLS IN GAAS/ALGAAS WAVE-GUIDE MODULATORS [J].

HAUSKEN, T ;

YAN, RH ;

SIMES, RJ ;

COLDREN, LA .

APPLIED PHYSICS LETTERS, 1989, 55 (08) :718-720

[4] HIGH-SPEED BULK INGAASP-INP ELECTROABSORPTION MODULATORS WITH BANDWIDTH IN EXCESS OF 20 GHZ [J].

MAK, G ;

ROLLAND, C ;

FOX, KE ;

BLAAUW, C .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (10) :730-733

[5] LASER-COMPATIBLE WAVE-GUIDE ELECTROABSORPTION MODULATORS [J].

MOSS, D ;

CHATENOUD, F ;

CHARBONNEAU, S ;

DELAGE, A ;

LANDHEER, D ;

BARBER, R .

CANADIAN JOURNAL OF PHYSICS, 1991, 69 (3-4) :497-507

[6] ELECTROABSORPTION IN SINGLE QUANTUM WELL GAAS-LASER STRUCTURES [J].

SWANSON, PD ;

TANG, TK ;

GIVENS, ME ;

MILLER, LM ;

DETEMPLE, TA ;

COLEMAN, JJ .

APPLIED PHYSICS LETTERS, 1989, 54 (18) :1716-1718

[7] MONOLITHIC INTEGRATION OF A LASER DIODE AND AN OPTICAL WAVE-GUIDE MODULATOR HAVING A GAAS/ALGAAS QUANTUM-WELL DOUBLE HETEROSTRUCTURE [J].

TARUCHA, S ;

OKAMOTO, H .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :1-3

[8] MONOLITHIC WAVE-GUIDE COUPLED CAVITY LASERS AND MODULATORS FABRICATED BY IMPURITY INDUCED DISORDERING [J].

THORNTON, RL ;

MOSBY, WJ ;

PAOLI, TL .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1988, 6 (06) :786-792

[9] QUENCHING OF THE EXCITONIC RESONANCE IN A WAVE-GUIDE QUANTUM-WELL FIELD-EFFECT MODULATOR [J].

TOMBLING, C ;

STALLARD, MM ;

ROBERTS, JS .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (06) :502-507

[10] HIGH-SPEED OPTICAL MODULATION WITH GAAS/GAALAS QUANTUM WELLS IN A P-I-N-DIODE STRUCTURE [J].

WOOD, TH ;

BURRUS, CA ;

MILLER, DAB ;

CHEMLA, DS ;

DAMEN, TC ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :16-18

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