HIGH-SPEED BULK INGAASP-INP ELECTROABSORPTION MODULATORS WITH BANDWIDTH IN EXCESS OF 20 GHZ

被引：15

作者：

MAK, G

ROLLAND, C

FOX, KE

BLAAUW, C

机构：

[1] Advanced Technology Laboratory, Bell-Northern Research Ltd., Ottawa, Ont.

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 10期

关键词：

D O I：

10.1109/68.60774

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bulk InGaAsP-InP electroabsorption optical modulators with high extinction ratio, low drive voltage, and high modulation bandwidth at λ = 1.3 μm are reported. The devices have a tapered fiber-to-modulator-to-tapered fiber extinction ratio greater than 20 dB at a drive voltage of < 5 V. Very low capacitance modulators (< 0.2 pF) were fabricated using SiO2 bonding pad isolation, resulting in a measured electrical modulation bandwidth in excess of 20 GHz, the highest yet reported for bulk devices. © 1990 IEEE

引用

页码：730 / 733

页数：4

共 9 条

[1]

KAWANO K, 1990, INTEGRATED PHOTON RE

[2]

Kotaka I., 1989, IEEE Photonics Technology Letters, V1, P100, DOI 10.1109/68.34753

[3]

MAK G, IN PRESS

[4]

NISHIMOTO H, 1990, OPTICAL FIBER COMMUN