THE INVERTED HORIZONTAL REACTOR - GROWTH OF UNIFORM INP AND GALNAS BY LPMOCVD

被引：23

作者：

PUETZ, N

HILLIER, G

SPRINGTHORPE, AJ

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 05期

关键词：

D O I：

10.1007/BF02652122

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：381 / 386

页数：6

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[6] STRUCTURAL AND PHOTOLUMINESCENT PROPERTIES OF GAINAS QUANTUM-WELLS WITH INP BARRIERS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
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[7] GROWTH OF ULTRAPURE INP BY ATMOSPHERIC-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY
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[8] GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[9] METALORGANIC CHEMICAL VAPOR-DEPOSITION INGAAS P-I-N PHOTODIODES WITH EXTREMELY LOW DARK CURRENT
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[10] GALLANT M, IN PRESS 14TH P INT