CHIRP BEHAVIOR OF HIGH-SPEED GAINASP-INP OPTICAL-INTENSITY MODULATOR

被引：6

作者：

SODA, H

SATO, K

NAKAI, K

ISHIKAWA, H

IMAI, H

机构：

[1] Fujitsu Lab Ltd, Japan

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 19期

关键词：

D O I：

10.1049/el:19880811

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

4

引用

收藏

页码：1194 / 1195

页数：2

相关论文

共 4 条

[1] ELECTROABSORPTION IN INGAASP-INP DOUBLE HETEROSTRUCTURES [J].

DUTTA, NK ;

OLSSON, NA .

ELECTRONICS LETTERS, 1984, 20 (15) :634-635

[2] FREQUENCY CHIRPING OF EXTERNAL MODULATION AND ITS REDUCTION [J].

KOYAMA, F ;

IGA, K .

ELECTRONICS LETTERS, 1985, 21 (23) :1065-1066

[3] HIGH-SPEED ELECTROABSORPTION MODULATOR WITH STRIP-LOADED GAINASP PLANAR WAVE-GUIDE [J].

NODA, Y ;

SUZUKI, M ;

KUSHIRO, Y ;

AKIBA, S .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1986, 4 (10) :1445-1453

[4] HIGH-SPEED GAINASP-INP BURIED-HETEROSTRUCTURE OPTICAL-INTENSITY MODULATOR WITH SEMIINSULATING INP BURYING LAYERS [J].

SODA, H ;

NAKAI, K ;

ISHIKAWA, H ;

IMAI, H .

ELECTRONICS LETTERS, 1987, 23 (23) :1232-1234