IDENTIFICATION OF RECOMBINATION LUMINESCENCE TRANSITIONS IN N-DOPED GAAS1-XPX (X=0.87)

被引:43
作者
WOLFORD, DJ
NELSON, RJ
HOLONYAK, N
STREETMAN, BG
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
[3] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
关键词
D O I
10.1016/0038-1098(76)90910-8
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:741 / 747
页数:7
相关论文
共 29 条
[1]  
ANDERSON RN, UNPUBLISHED
[2]  
BEBB HB, 1972, SEMICONDUCT SEMIMET, V8, P223
[3]   RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING [J].
CRAFORD, MG ;
SHAW, RW ;
HERZOG, AH ;
GROVES, WO .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) :4075-&
[4]   VAPOR-PHASE EPITAXIAL MATERIALS FOR LED APPLICATIONS [J].
CRAFORD, MG ;
GROVES, WO .
PROCEEDINGS OF THE IEEE, 1973, 61 (07) :862-880
[5]   INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE [J].
DEAN, PJ ;
THOMAS, DG .
PHYSICAL REVIEW, 1966, 150 (02) :690-&
[6]   INTRINSIC OPTICAL ABSORPTION OF GALLIUM PHOSPHIDE BETWEEN 2.33 AND 3.12 EV [J].
DEAN, PJ ;
KAMINSKY, G ;
ZETTERSTROM, RB .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) :3551-+
[7]   OPTICAL ABSORPTION BY IMPURITIES IN P-TYPE GALLIUM PHOSPHIDE [J].
DISHMAN, JM ;
DIDOMENICO, M .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (08) :2621-+
[8]   OPTICAL ABSORPTION OF GALLIUM ARSENIDE IN RESTSTRAHLEN BAND [J].
FRAY, SJ ;
WILLIAMS, N ;
JOHNSON, FA ;
QUARRINGTON, JE .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 77 (493) :215-&
[9]  
GARBUZOV DZ, 1975, SOV PHYS SEMICOND+, V8, P998
[10]  
GROVES WG, COMMUNICATION