STUDY OF THE THOMAS PEAK IN ELECTRON-CAPTURE

被引：28

作者：

MCGUIRE, JH

STOCKLI, M

COCKE, CL

HORSDALPEDERSEN, E

SIL, NC

机构：

[1] AARHUS UNIV,INST PHYS,DK-8000 AARHUS C,DENMARK

[2] INDIAN ASSOC CULTIVAT SCI,DEPT THEORET PHYS,CALCUTTA 700032,W BENGAL,INDIA

来源：

PHYSICAL REVIEW A | 1984年 / 30卷 / 01期

关键词：

D O I：

10.1103/PhysRevA.30.89

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：89 / 94

页数：6

共 39 条

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[25] EXACT 2ND BORN CALCULATIONS FOR ELECTRON-CAPTURE FOR SYSTEMS WITH VARIOUS PROJECTILE AND TARGET CHARGES [J].

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[26] INTERPRETATION OF 2ND BORN AMPLITUDES IN ELECTRON-CAPTURE [J].

MCGUIRE, JH ;

SIMONY, PR ;

WEAVER, OL ;

MACEK, J .

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[27] THE STRONG POTENTIAL APPROXIMATION WITH NON-ORTHOGONALITY TERMS [J].

MCGUIRE, JH .

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[29]

PEDERSEN EH, 1983, 13TH INT C PHYS EL A

[30]

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