ION-ASSISTED PULSED-LASER DEPOSITION

被引：13

作者：

READE, RP ^{[1
]}

CHURCH, SR ^{[1
]}

RUSSO, RE ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1995年 / 66卷 / 06期

关键词：

D O I：

10.1063/1.1146496

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Ion bombardment on the surface of a substrate during deposition of a thin film [ion-assisted (IA) deposition] is used to control thin-film crystalline orientation and phase. Ion-assisted deposition is demonstrated with the relatively new pulsed-laser deposition (PLD) technique, a method of thin-film growth that has shown promise for the synthesis of high-temperature superconductor and other complex oxide films. A versatile vacuum chamber with independent control of ion-gun parameters was developed for ion-assisted pulsed-laser deposition (IAPLD). Control of crystalline orientation and alignment of yttria-stabilized zirconia and CeO2 layers for use in YBa2Cu3O7-δ superconductor devices is demonstrated using this IAPLD technology. © 1995 American Institute of Physics.

引用

页码：3610 / 3614

页数：5

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