PREPARATION OPTICAL AND DIELECTRIC PROPERTIES OF VAPOR-DEPOSITED NIOBIUM OXIDE THIN FILMS

被引:48
作者
DUFFY, MT
WANG, CC
WAXMAN, A
ZAININGER, KH
机构
关键词
D O I
10.1149/1.2411804
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:234 / +
页数:1
相关论文
共 24 条
[1]   PHOTOCONDUCTION IN ANODIC TA2O5 [J].
APKER, L ;
TAFT, EA .
PHYSICAL REVIEW, 1952, 88 (01) :58-59
[3]  
Bube RH., 1960, PHOTOCONDUCTIVITY SO
[4]   REFRACTIVE INDICES OF ZNO ZNS AND SEVERAL THIN-FILM INSULATORS [J].
BURGIEL, JC ;
CHEN, YS ;
VRATNY, F ;
SMOLINSKY, G .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :729-+
[5]   ABSORPTION SPECTRA OF VANADIUM, NIOBIUM, AND TANTALUM PENTOXIDES [J].
CONLON, DC ;
DOYLE, WP .
JOURNAL OF CHEMICAL PHYSICS, 1961, 35 (02) :752-&
[6]  
FAN HY, 1956, REPORTS PROGRESS PHY, V19
[7]  
Heavens O.S, 1955, OPTICAL PROPERTIES T
[8]   IMPEDANCE OF SEMICONDUCTOR-INSULATOR-METAL CAPACITORS [J].
LEHOVEC, K ;
SLOBODSKOY, A .
SOLID-STATE ELECTRONICS, 1964, 7 (01) :59-79
[10]   FIELD EFFECT-CAPACITANCE ANALYSIS OF SURFACE STATES ON SILICON [J].
LEHOVEC, K ;
SLOBODSKOY, A ;
SPRAGUE, JL .
PHYSICA STATUS SOLIDI, 1963, 3 (03) :447-464