CHEMICAL POLISHING OF CADMIUM SULFIDE

被引：20

作者：

SULLIVAN, MV

BRACHT, WR

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1967年 / 114卷 / 03期

关键词：

D O I：

10.1149/1.2426570

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：295 / &

共 7 条

[1] Differences in the Intensity of X-Ray Reflection from the two 111-surfaces of Sphalerite [J].

Coster, D. ;

Knol, K. S. ;

Prins, J. A. .

ZEITSCHRIFT FUR PHYSIK, 1930, 63 (5-6) :345-369

[2] DISLOCATIONS IN 2 TYPES OF CDS CRYSTALS [J].

REYNOLDS, DC ;

CZYZAK, SJ .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (01) :94-98

[3] AN ELECTROPOLISHING TECHNIQUE FOR GERMANIUM AND SILICON [J].

SULLIVAN, MV ;

KLEIN, DL ;

FINNE, RM ;

POMPLIANO, LA ;

KOLB, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) :412-419

[4] THE CHEMICAL POLISHING OF GALLIUM ARSENIDE IN BROMINE-METHANOL [J].

SULLIVAN, MV ;

KOLB, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) :585-587

[5] CRYSTALLOGRAPHIC POLARITY IN II-VI COMPOUNDS [J].

WAREKOIS, EP ;

MARIANO, AN ;

GATOS, HC ;

LAVINE, MC .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (02) :690-&

[6]

WAREKOIS EP, 1966, J APPL PHYS, V37, P2203, DOI 10.1063/1.1708786

[7] X-RAY CORRELATION OF A-B LAYER ORDER OF CADMIUM SELENIDE WITH SIGN OF POLAR AXIS [J].

ZARE, R ;

COOK, WR ;

SHIOZAWA, LR .

NATURE, 1961, 189 (476) :217-&

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