STUDY OF THE OPTICAL-PROPERTIES OF (100) AND (111) ORIENTED GAINAS/GAAS STRINED-LAYER SUPERLATTICES

被引：9

作者：

LAURICH, BK

SMITH, DL

ELCESS, K

FONSTAD, CG

MAILHIOT, C

机构：

[1] MIT,CAMBRIDGE,MA 02139

[2] XEROX WEBSTER RES CTR,WEBSTER,NY 14560

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1989年 / 5卷 / 03期

关键词：

D O I：

10.1016/0749-6036(89)90312-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：341 / 344

页数：4

相关论文

共 18 条

[1] PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY MEASUREMENTS ON BAND-EDGE OFFSETS IN STRAINED MOLECULAR-BEAM-EPITAXY-GROWN INX GA1-XAS/GAAS QUANTUM WELLS
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[6] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES
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[7] ENHANCEMENT IN OPTICAL-TRANSITION IN (111)-ORIENTED GAAS-ALGAAS QUANTUM WELL STRUCTURES
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[J]. PHYSICAL REVIEW LETTERS, 1988, 60 (04) : 349 - 352
[8] OBSERVATION OF THE 2S STATE EXCITONS IN (111)-ORIENTED GAAS/ALXGA1-XAS QUANTUM-WELL STRUCTURES
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[9] ELECTRONIC-STRUCTURE OF [001]-GROWTH-AXIS AND [111]-GROWTH-AXIS SEMICONDUCTOR SUPERLATTICES
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[J]. PHYSICAL REVIEW B, 1987, 35 (03): : 1242 - 1259
[10] K-P THEORY OF SEMICONDUCTOR SUPERLATTICE ELECTRONIC-STRUCTURE .2. APPLICATION TO GA1-XINXAS-AL1-YINYAS(100) SUPERLATTICES
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[J]. PHYSICAL REVIEW B, 1986, 33 (12): : 8360 - 8372