AN ANALYTICAL MODEL FOR THE CHANNEL ELECTRIC-FIELD IN MOSFETS WITH GRADED-DRAIN STRUCTURES

被引：46

作者：

TERRILL, KW

HU, C

KO, PK

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 11期

关键词：

D O I：

10.1109/EDL.1984.25980

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：440 / 442

页数：3

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