HOT-HOLE-INDUCED DEGRADATION IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS - EXPERIMENTAL AND THEORETICAL-ANALYSIS

被引：4

作者：

PECORA, A

TALLARIDA, G

FORTUNATO, G

MARIUCCI, L

REITA, C

MIGLIORATO, P

机构：

[1] CRIF,ENEA,I-80055 PORTICI,ITALY

[2] GEC LTD,MARCONI HIRST RES CTR,WEMBLEY,MIDDX,ENGLAND

[3] UNIV CAMBRIDGE,DEPT ENGN,CAMBRIDGE,ENGLAND

来源：

IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 1994年 / 141卷 / 01期

关键词：

ACTIVE MATRIX; HOT-CARRIER EFFECTS; POLYSILICON TECHNOLOGY;

D O I：

10.1049/ip-cds:19949829

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The application of bias stress with high source-drain voltage and different gate voltages in polycrystalline silicon thin-film transistors produces marked modifications both in the off current as well as device transconductance. These effects are explained in terms of hot-carrier effects related to a combination of charge injection into the gate insulator and formation of interface states near the drain.

引用

收藏

页码：33 / 37

页数：5

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