A 60-NS 16-MBIT CMOS DRAM WITH A TRANSPOSED DATA-LINE STRUCTURE

被引：23

作者：

AOKI, M

NAKAGOME, Y

HORIGUCHI, M

TANAKA, H

IKENAGA, S

ETOH, J

KAWAMOTO, Y

KIMURA, S

TAKEDA, E

SUNAMI, H

ITOH, K

机构：

[1] HITACHI LTD,RECH FONDAMENTALE RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

[2] HITACHI VLSI ENGN CORP,KODAIRA,TOKYO 187,JAPAN

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1988年 / 23卷 / 05期

关键词：

D O I：

10.1109/4.5932

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1113 / 1119

页数：7

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