DEEP DEFECT LEVELS IN PLASTICALLY DEFORMED GAAS

被引:15
作者
SUEZAWA, M
SUMINO, K
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 04期
关键词
D O I
10.1143/JJAP.25.533
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:533 / 537
页数:5
相关论文
共 24 条
[1]   INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].
ASHEN, DJ ;
DEAN, PJ ;
HURLE, DTJ ;
MULLIN, JB ;
WHITE, AM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053
[2]   PHOTORESPONSE OF THE ASGA ANTISITE DEFECT IN AS-GROWN GAAS [J].
BAEUMLER, M ;
KAUFMANN, U ;
WINDSCHEIF, J .
APPLIED PHYSICS LETTERS, 1985, 46 (08) :781-783
[3]  
Bazhenov A. V., 1981, Soviet Physics - Solid State, V23, P2068
[4]   PHOTO-LUMINESCENCE AT DISLOCATIONS IN GAAS AND INP [J].
BOHM, K ;
FISCHER, B .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5453-5460
[5]   ABSENCE OF DISLOCATION-INDUCED LUMINESCENCE IN GAAS [J].
BOHM, K ;
GWINNER, D .
APPLIED PHYSICS, 1978, 17 (02) :155-157
[6]   MODIFICATION OF THE DISLOCATION LUMINESCENCE SPECTRUM BY OXYGEN ATMOSPHERES IN SILICON [J].
DROZDOV, NA ;
PATRIN, AA ;
TKACHEV, VT .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 64 (01) :K63-K65
[7]   NATURE OF DISLOCATION LUMINESCENCE IN SILICON [J].
DROZDOV, NA ;
PATRIN, AA ;
TKACHEV, VD .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 83 (02) :K137-K139
[8]  
GERTHSEN D, UNPUB ACTA PHYSICA P
[9]   PHOTO-LUMINESCENCE IN PLASTICALLY TWISTED SILICON [J].
GWINNER, D ;
LABUSCH, R .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 65 (01) :K99-K101
[10]   PHOTOLUMINESCENCE AT DISLOCATION IN GAAS [J].
HEINKE, W ;
QUEISSER, HJ .
PHYSICAL REVIEW LETTERS, 1974, 33 (18) :1082-1084