EFFECTS OF IONIZING-RADIATION ON CHARGE-COUPLED DEVICE STRUCTURES

被引：19

作者：

KILLIANY, JM ^{[1
]}

BAKER, WD ^{[1
]}

SAKS, NS ^{[1
]}

BARBE, DF ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1974年 / NS21卷 / 06期

关键词：

D O I：

10.1109/TNS.1974.6498927

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：193 / 200

页数：8

共 10 条

[1]

BARBE DF, 1972, REP NRL PROG, P1

[2] EFFECTS OF GAMMA-RADIATION ON CHARGE-COUPLED DEVICES [J].

BARBE, DF ;

KILLIANY, JM ;

HUGHES, HL .

APPLIED PHYSICS LETTERS, 1973, 23 (07) :400-402

[3] FAST INTERFACE-STATE LOSSES IN CHARGE-COUPLED DEVICES [J].

CARNES, JE ;

KOSONOCKY, WF .

APPLIED PHYSICS LETTERS, 1972, 20 (07) :261-+

[4]

CARNES JE, 1974, SOLID STATE TECHNOL, V17, P67

[5]

EMMONS SP, 1973, DEVICE RESEARCH C BO

[6]

HUGHES HL, 1971, MAR IEEE REL PHYS S

[7] EFFECTS OF RADIATION ON BURIED-CHANNEL CCDS WITH DOPED POLYSILICON GATES AND UNDOPED POLYSILICON INTERELECTRODE ISOLATION [J].

KILLIANY, JM ;

SAKS, NS ;

BAKER, WD ;

BARBE, DF .

APPLIED PHYSICS LETTERS, 1974, 24 (10) :506-508

[8]

KOSONOCKY WF, 1973, RCA REV, V34, P164

[9] EXPERIMENTAL INVESTIGATION OF A LINEAR 500-ELEMENT 3-PHASE CHARGE-COUPLED DEVICE [J].

SEQUIN, CH .

BELL SYSTEM TECHNICAL JOURNAL, 1974, 53 (04) :581-610

[10] CHARGE-TRANSFER DEVICES [J].

TOMPSETT, MF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (04) :1166-+

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