ELECTRON-BEAM ELECTROREFLECTANCE STUDIES OF GAAS AND CDTE SURFACES

被引：16

作者：

RACCAH, PM ^{[1
]}

GARLAND, JW ^{[1
]}

BUTTRILL, SE ^{[1
]}

FRANCKE, L ^{[1
]}

JACKSON, J ^{[1
]}

机构：

[1] CHARLES EVANS & ASSOCIATES,REDWOOD CITY,CA 94063

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 19期

关键词：

D O I：

10.1063/1.99088

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1584 / 1586

页数：3

共 11 条

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ASPNES, DE .

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[2] TEMPERATURE-DEPENDENCE OF BAND-GAP AND COMPARISON WITH THRESHOLD FREQUENCY OF PURE GAAS LASERS [J].

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[3]

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[4] LINE-SHAPE OF THE OPTICAL DIELECTRIC FUNCTION [J].

GARLAND, JW ;

ABAD, H ;

VICCARO, M ;

RACCAH, PM .

APPLIED PHYSICS LETTERS, 1988, 52 (14) :1176-1178

[5]

GARLAND JW, 1986, SPIE P, V659, P32

[6]

KELDYSH LV, 1958, SOV PHYS JETP-USSR, V7, P788

[7] ELECTRON BEAM MODULATED OPTICAL PROPERTIES OF SEMICONDUCTORS [J].

MCCOY, JH ;

WITTRY, DB .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (03) :1174-&

[8] OBSERVATION OF TRANSITIONS BETWEEN ELECTRONIC STATES AT THE (111) A-FACE OF CDTE BY ELECTROLYTE ELECTROREFLECTANCE [J].

RACCAH, PM ;

GARLAND, JW ;

ZHANG, Z ;

ABELS, LL ;

UGUR, S ;

MIOC, S ;

BROWN, M .

PHYSICAL REVIEW LETTERS, 1985, 55 (12) :1323-1326

[9] COMPARATIVE-STUDY OF DEFECTS IN SEMICONDUCTORS BY ELECTROLYTE ELECTROREFLECTANCE AND SPECTROSCOPIC ELLIPSOMETRY [J].

RACCAH, PM ;

GARLAND, JW ;

ZHANG, Z ;

LEE, U ;

XUE, DZ ;

ABELS, LL ;

UGUR, S ;

WILINSKY, W .

PHYSICAL REVIEW LETTERS, 1984, 53 (20) :1958-1961

[10]

RACCAH PM, 1977, PHYS REV B, V36, P4271

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