OXYGEN DISTRIBUTION IN A HORIZONTAL BRIDGMAN-GROWN, SEMI-INSULATING GAAS INGOT

被引：12

作者：

SHIKANO, K ^{[1
]}

KOBAYASHI, K ^{[1
]}

MIYAZAWA, S ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, ATSUGI ELECT COMMUN LAB, ATSUGI, KANAGAWA 24301, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 04期

关键词：

CHROMIUM AND ALLOYS - CRYSTALS - OXYGEN;

D O I：

10.1063/1.95588

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oxygen concentration in a horizontal Bridgman-grown, chromium and oxygen-doped, semi-insulating GaAs ingot was analyzed using charged particle activation analysis. The oxygen concentration ranged from 2. 0 multiplied by 10**1**5 at seed end to 7. 2 multiplied by 10**1**5 cm** minus **3 at tail end. The change of oxygen concentration measured along the length of ingot was in accordance with the normal-freeze equation. The effective distribution coefficient of oxygen was estimated to be 0. 39.

引用

页码：391 / 393

页数：3

共 8 条

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[2]

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[4]

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[6]

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[7]

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[8]

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