TRACTABLE APPROACH FOR CALCULATING LATTICE-DISTORTIONS AROUND SIMPLE DEFECTS IN SEMICONDUCTORS - APPLICATION TO THE SINGLE DONOR GE IN GAP

被引：43

作者：

SCHEFFLER, M

VIGNERON, JP

BACHELET, GB

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

[2] FAC UNIV NOTRE DAME PAIX,DEPT PHYS,B-5000 NAMUR,BELGIUM

[3] SCUOLA NORMALE SUPER,I-56100 PISA,ITALY

来源：

PHYSICAL REVIEW LETTERS | 1982年 / 49卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.49.1765

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1765 / 1768

页数：4

共 18 条

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