SOLVENT AND PRESSURE EFFECTS ON THE PHOTOLUMINESCENCE IN POROUS SI

被引:6
作者
KURODA, N [1 ]
MATSUDA, Y [1 ]
NAKAJIMA, S [1 ]
TAKETSU, I [1 ]
OOKUBO, N [1 ]
机构
[1] NEC CORP LTD,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 216,JAPAN
关键词
D O I
10.1063/1.359988
中图分类号
O59 [应用物理学];
学科分类号
摘要
The photoluminescence band in porous Si is found to shift monotonically toward lower energy at a rate of -(18+/-5) meV/GPa if a hydrostatic pressure of up to 5 GPa is applied with liquid argon, in contrast to a convex behavior of the shift observed when a methanol-ethanol mixture is used as the pressure-transmitting medium. The data show that the electronic energy gap relevant to the luminescence is intrinsically reduced by the hydrostatic compression but has a distinct solvatochromic character. (C) 1995 American Institute of Physics.
引用
收藏
页码:3520 / 3522
页数:3
相关论文
共 20 条
[1]   ADSORBATE EFFECTS ON PHOTOLUMINESCENCE AND ELECTRICAL-CONDUCTIVITY OF POROUS SILICON [J].
BENCHORIN, M ;
KUX, A ;
SCHECHTER, I .
APPLIED PHYSICS LETTERS, 1994, 64 (04) :481-483
[2]  
CAMASSEL J, 1992, 21ST P INT C PHYS SE, P1463
[3]  
CESCHINI M, 1995, 22ND P INT C PHYS SE, V3, P2165
[4]  
CHUN JKM, 1993, MAT RES S C, V283, P329
[5]  
KOCH F, 1993, MATER RES SOC SYMP P, V298, P319, DOI 10.1557/PROC-298-319
[6]  
LAUERHAAS JM, 1992, MATER RES SOC SYMP P, V256, P137
[7]   OPTICAL-PROPERTIES OF POROUS SILICON [J].
LOCKWOOD, DJ .
SOLID STATE COMMUNICATIONS, 1994, 92 (1-2) :101-112
[8]  
Matsuda Yuji, UNPUB
[9]   MICROSCOPE OBSERVATION OF A SELF-STANDING FILM OF POROUS SILICON [J].
OOKUBO, N ;
MATSUDA, Y ;
OCHIAI, Y ;
KURODA, N .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 20 (03) :324-327
[10]   HYDROSTATIC-PRESSURE EFFECTS ON THE OPTICAL-TRANSITIONS IN THE FREESTANDING POROUS SILICON FILM [J].
OOKUBO, N ;
MATSUDA, Y ;
KURODA, N .
APPLIED PHYSICS LETTERS, 1993, 63 (03) :346-348