HYDROSTATIC-PRESSURE EFFECTS ON THE OPTICAL-TRANSITIONS IN THE FREESTANDING POROUS SILICON FILM

被引：15

作者：

OOKUBO, N ^{[1
]}

MATSUDA, Y ^{[1
]}

KURODA, N ^{[1
]}

机构：

[1] TOHOKU UNIV,INST MAT RES,AOBA KU,SENDAI,MIYAGI 980,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 03期

关键词：

D O I：

10.1063/1.110038

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical absorption and photoluminescence spectra in the range 1.2-2.2 eV have been measured in free-standing films of porous Si under hydrostatic pressures up to 6.4 GPa at room temperature. The absorption rises nearly exponentially in the low energy region. Under pressure, the whole spectrum shifts toward lower energies with a pressure coefficient of about -90 meV/GPa. The photoluminescence spectrum also exhibits a redshift of about -40 meV/GPa. These results are interpreted by analogy with the pressure-induced shrinkage of the optical energy gap seen in amorphous chalcogenide semiconductors.

引用

页码：346 / 348

页数：3

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